Split Ga vacancies in <i>n</i>-type and semi-insulating β-Ga₂O₃ single crystals

Vacancies and Dominant Electrically Active Defects in Bulk Semi-Insulating GaAs

Positron Annihilation techniques have been used to investigate two important defects that occur naturally in semi-insulating (SI) Gallium arsenide. The growth and assessment of SI GaAs and the application of PA to defect analysis of this important material are reported.

Thermal Stability of Isolated and Complexed Ga Vacancies in GaN Bulk Crystals

Semi-insulating Liquids

Charge separation near a liquid/solid interface is explored by the electrohydrodynamic pumping of Freon TF, transformer oil, and silicone oil using high voltage traveling waves. Liquid head displacement measurements show strong dependencies on peak voltage amplitude (1.0-2.5 kV), frequency (0.1-20 Hz), liquid viscosity (0.5-20 cS), and liquid conductivity to 10-9 0-lm-l ). Reverse pumping, oppo...

Inter-martensitic transitions in Ni–Fe–Ga single crystals

The strain–temperature response of Ni–Fe–Ga single crystals underscores the role of the inter-martensitic transformation in creating intersecting heating and cooling segments; the separation of these segments occurs due to irreversibilities at high stresses and at high temperatures. An ultra-narrow tensile (1 C) and compressive (<10 C) thermal hysteresis are observed for the A 10M 14M case, acc...

Transmission electron microscopy of semi-insulating Ga As deformed at room temperature and under confining pressure